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Selected Graves Group Publications 

  1. Nonthermal atmospheric rf plasma in one-dimensional spherical coordinates: Asymmetric sheath structure and the discharge mechanism, (With Y. Sakiyama) J. Appl. Phys. 101 (7), 2007.
  2. Modeling of atmospheric-pressure plasma columns sustained by surface waves, (with Y. Kabouzi, E. Castanos-Martinez, et al.) Phys. Rev. E. 75 (1), 2007.
  3. Penetration of fluorine into the silicon lattice during exposure to F atoms, F-2, and XeF2: Implications for spontaneous etching reactions, (with H.F. Winters and D. Humbird), J. Vac. Sci. Tech. A. 25 (1): 96-103, 2007.
  4. Electron impact dissociation cross sections for C2F6 (with D.W. Flaherty, M.A. Kasper, J.E. Baio, et al.), J. Phys. D. 39 (20) 4393-4399, 2006.
  5. Comparison of model and experiment for Ar, Ar/O-2 and Ar/O-2/Cl-2 inductively coupled plasmas (with C.C. Hsu, M.A. Nierode, J.W. Coburn, et al) J. Phys. D. 39 (15): 3272-3284, 2006.
  6. Finite element analysis of an atmospheric pressure RF-excited plasma needle, (with Y. Sakiyama) J. Phys. D: Appl. Phys. 39 (16) 3451-3456, 2006.
  7. Corona-glow transition in the atmospheric pressure RF-excited plasma needle, (with Y. Sakiyama) J. Phys. D: Appl. Phys. 39 (16) 3644-3652, 2006.
  8. Etching of ruthenium coatings in O-2- and Cl-2-containing plasmas, (with C.C. Hsu and J.W. Coburn), J. Vac. Sci. Tech. A 24 (1), 2005.
  9. Nitrogen dissociation in a low pressure cylindrical ICP discharge studied by actinometry and mass spectrometry, (with T. Czerwiec and F. Greer) J. Phys D:- Appl. Phys. 38 (24): 4278-4289, 2005.
  10. Silicon etch by fluorocarbon and argon plasmas in the presence of fluorocarbon films, (with J.J. Végh and D. Humbird), J. Vac. Sci. Tech., 23(6), 1598-1604, 2005.
  11. Molecular dynamics simulations of plasma-surface interactions: importance of visualization tools, (with D. Humbird), IEEE Transactions on Plasma Science, 33 (2), 226-7, 2005.
  12. CF and CF2 radical kinetics and transport in a pulsed CF, (with JP Booth, H Abada, and P Chabert ), Plasma Sources Science & Technology, 14(2), 273-82, 2005.
  13. Microhollow cathode discharge reactor chemistry, (with D. Hsu), Plasma Chemistry & Plasma Processing, 25 (1), 1-17, 2005.
  14. Mode transitions in low pressure rare gas cylindrical ICP discharge studied by optical emission spectroscopy, (with T Czerwiec), J. Phys. D, Appl. Phys., 37(20), 2827-40, 2005.
  15. Atomistic simulations of Ar+-ion-assisted etching of silicon by fluorine and chlorine, (with D. Humbird), JVSTA, 23(1):31-8, 2005.
  16. Vacuum beam studies of fluorocarbon radicals and argon ions on Si and SiO2 surfaces, (with Y. Kimura and JW Coburn), JVSTA, 22(6):2508-16, 2004.
  17. Molecular dynamics simulations of Si-F surface chemistry with improved interatomic potentials, (with D. Humbird), Plasma Source Science and Technology, 13(3), 548-52, 2004.
  18. Mechanism of silicon etching in the presence of CF2, F, and Ar+, (with D. Humbird), J. Appl. Phys., 96(5):2466-71, 2004.
  19. Fluorocarbon plasma etching of silicon: Factors controlling etch rate, (with D. Humbird), J. Appl. Phys., 96(1):65-70, 2004.
  20. Atomistic Simulations of Spontaneous Etching of Silicon by Fluorine and Chlorine, (with D. Humbird), J. Applied Physics, 96(1):791-798, 2004.
  21. Molecular dynamics simulations of Ar+-induced transport of fluorine through fluorocarbon films, (with G.S. Oehrlein, X.F. Hsu, and D. Humbird), Applied Physics Letters, 84(7):1073-1075, 2004.
  22. Improved interatomic potentials for silicon-fluorine and silicon-chlorine, (with D. Humbird), J. Chemical Physics, 120 (5), 2405-2412, 2004.
  23. Microhollow cathode discharge stability with flow and reaction, (with D. Hsu), J. Physics D-Applied Physics, 36(23):2898-2907, 2003.
  24. Fluorine atom subsurface diffusion and reaction in photoresist, (with F. Greer, D. Fraser, and J. Coburn), J. Appl. Physics, 94 (12) , 7453-7461, 2003.
  25. Influence of modeling and simulation on the maturation of plasma technology: Feature evolution and reactor design (with M.J. Kushner). JVST A21(5 Suppl S):S152-S156, 2003.
  26. Fundamental beam studies of radical enhanced atomic layer deposition of TiN, (with F. Greer, J.W. Coburn, and D. Fraser), JVSTA, 21(1):96-105, 2003
  27. Silicon epitaxial growth on the Si(001)2x1 surface from silane using dynamic Monte Carlo simulations, (with K. Satake), J. Chem. Phy. 118(14):6503-6511, 2003.
  28. Molecular dynamics simulations of ion bonmbardment on hydrogen terminated Si(001) 2x1 surface, (with K. Satake), JVSTA, 21(2):484-490, 2003
  29. Inductively Coupled Plasmas in Oxygen: Modeling and Experiment, (with M. W. Kiehlbauch), JVSTA, 21(3): 660-670, 2003.
  30. Neutral gas temperatures measured within a high-density, inductively coupled plasma abatement device (with E. Tonnis), J. Vac.Sci.Tech A, 20(5):1787-1795, 2002.
  31. C4F8 Dissociation in an Inductively Coupled Plasma, (with M. T. Radtke, and J. W. Coburn), JVSTA, 21(4):1038-1047, 2003.
  32. Argon and Oxygen Ion Chemistry Efects in Photoresist Etching, (with F.Greer, L.Van, D. Fraser, and J. W. Coburn), JVST B, 20(5):1901-1906, 2002
  33. Fundamental Beam Studies of Deuterium and Fluorine Radical Reaction Kinetics on Surfaces, (with F. Greer), JVST , 21(4):1391-1402, 2003.
  34. The Effect of Neutral Transport on the Etch Product Lifecycle during Plasma Etching of Silicon in Chlorine Gas, (with M.W. Kiehlbaugh), JVSTA, 21(1):116-126, 2003.
  35. Controlling Surfaces in Plasma Processing: Role of Ions via Molecular Dynamics Simulations of Surface Chemistry, (with D. Humbird), Plasma Sources Science and Technology, 11(3A Special Issue SI):A191-A195, 2002
  36. Surface chemistry associated with plasma etching processes, (with D. Humbird), Applied Surface Science, 192(1-4), 72-87, 2002.
  37. Ion-induced damage and annealing of silicon. Molecular dynamics simulations, (with D. Humbird), Pure and Applied Chemistry, 74(3), 419-422, 2002.
  38. Modeling argon inductively coupled plasmas: The electron energy distribution function and metastable kinetics, (with M.W. Kiehlbauch), J. Appl. Phys, 91(6), 3539-3546, 2002.
  39. Molecular Dynamics Simulations of Ion-Surface Interactions with Applications to Plasma Processing, (with C.F. Abrams) Advances in Chemical Engineering, Vol. 28, 149-202, 2001.
  40. D and F radical reaction kinetics on photoresist, (with F. Greer and J.W. Coburn), JVST B, 20(1),145-153, 2002.
  41. Temperature Resolved Modeling of Plasma Abatement of Perfluorinated Compounds, (with M. W. Kiehlbaugh), J. Appl. Phys., 89(4), 2047-2057, 2001.
  42. Atomistic Simulation of Fluorocarbon Deposition on Si by Continuous Bombardment with Energetic CF+ and CF2+, (with C.F. Abrams), JVST A, 19(1), 175-181, 2001.
  43. Measurements of Neutral and Ion Composition, Neutral Temperature, and EEDF in a CF4 Inductively Coupled Plasma, (with H. Singh and J.W. Coburn), JVSTA, 19(3), 719-729, 2001.
  44. Recombination coefficients of O and N radicals on stainless steel, (with H. Singh and J.W. Coburn), J. Appl. Phys. ,88, 3748, 2000.
  45. Vacuum beam studies of photoresist etching kinetics, (with F. Greer, J.W. Coburn, and D.B. Graves), JVST A,18, 2288, 2000.
  46. Surface Loss Coefficients of CFx and F Radicals on Stainless Steel, (with H. Singh and J.W. Coburn), JVST A, 18, 2680, 2000.
  47. Atomistic simulation of silicon bombardment by energetic CF3+: Product distributions and energies, (with C.F. Abrams), Thin Solid Films, 374, 150, 2000.
  48. Measurements of the electron energy distribution function in molecular gases in a shielded inductively coupled plasma, (with H. Singh), J. Appl. Phys., 88 (7), 3889, 2000.
  49. Molecular dynamics simulations of Si etching with energetic F+: Sensitivity of the results to the interatomic potential, (with C.F. Abrams), J. Appl. Phys., 88, 3734, 2000.
  50. On the active surface layer in CF3+ etching of Si: Atomistic simulation and a simple mass balance model, (with C.F. Abrams), JVST A 18(2), 411, 2000.
  51. New C-F interatomic potential for molecular dynamics simulation of fluorocarbon film formation, (with J. Tanaka, and C.F. Abrams),?JVST A 18(3), 938 , 2000.
  52. Appearance potential mass spectrometry: Discrimination of dissociative ionization products, (with H. Singh and J.W. Coburn), JVSTA, 18(2), 299, 2000.
  53. Measurements of the electron energy distribution function in molecular gases in an inductively coupled plasma, (with H. Singh), J. Appl. Phys., 87(9), 4098, 2000.
  54. Molecular dynamics simulations of Si etching by energetic CF3+, (with C.F. Abrams) J. Appl. Phys., 86, 5938, 1999.
  55. Hardmask Charging during Cl2 Plasma Etching of Silicon, (with M.A. Vyvoda and M. Li), J. Vac. Sci. Tech. A, 17(6), 3293, 1999.
  56. Inductively-coupled, point-of-use plasma abatement of PFCs and HFCs from etch processes utilizing O2 and H2O as additive gases, (with E.J. Tonnis, V.H. Vartanian, L. Beu, T. Lii, and R. Jewett), JVST A, 18, 393, 2000.
  57. The Role of Sidewall Scattering in Feature Profile Evolution During Cl2 and HBr Plasma Etching of Silicon, (with M.A. Vyvoda), JVST B, 18, 820, 1999.
  58. Trapping dynamics of ethane on Si(100)-(2x1): molecular beam experiments and molecular dynamics simulations, (with C.T. Reeves, B.A. Ferguson, C.B. Mullins, G.O. Sitz, and B.A. Helmer), J. Chem. Phys., 111, 7567-7575, 1999.
  59. Mass Spectrometric Detection of Reactive Neutral Species: Beam to Background Ratio, (with H. Singh and J.W. Coburn, JVST A, 17(5), 2447-2455, 1999.
  60. Sputtering and deposition of off-normal, near-threshold Cu+ bombardment: Molecular dynamics simulations, (with C.F. Abrams), J. Appl. Phys., 86(4), 2263, 1999.
  61. 3D Spatiokinetic Distributions of Sputtered and Scattered Products of Ar+, and Cu+ Impacts onto the Cu Surface: Molecular Dynamics Simulations, (with C.F. Abrams), IEEE Trans. Plasma Sci., 27(5), 1426, 1999.
  62. Feature Evolution Simulations of Copper Seed Layer Deposition Using Atomic-level Particle Scattering Information, (with M.A. Vyvoda and C.F. Abrams), IEEE Trans. Plasma Sci., 27(5), 1433, 1999.
  63. Numerical Modeling (with M. Li and M. Vyvoda), Chapter 8 in Ionized Physical Vapor Deposition, Ed. J. Hopwood, Academic Press, NY, 1999.
  64. Effects of plasma conditions on the shapes of features etched in Cl2 and HBr Plasmas. I. Bulk crystalline silicon etching, (with M.A. Vyvoda, H. Lee, M. Malyshev, F. Klemens, M. Cerullo, V. Donnelly, A. Kornblit, and J. Lee), J. Vac. Sci. Tech. A, 16(6), 3247, 1998.
  65. A Model of Point-of-Use Plasma Abatement of Perfluroinated Compounds with An Inductively Coupled Plasma, (with A. Fiala, M. Kiehlbauch, and S, Mahnovski), , J. Appl. Phys., 86(1), 152-162, 1999.
  66. Molecular dynamics simulations of Cl2+ impacts onto a chlorinated silicon surface: energies and angles of the reflected Cl2 and Cl fragments, (with B.A. Helmer), J. Vac. Sci. Tech. A, 17(5), 2759-2770, 1999.
  67. Heteronuclear and homonuclear surface abstraction reactions of Cl, Br and F, with G.P. Kota and J.W. Coburn), J.Appl. Phys., 85(1), 74, 1999.
  68. Heterogeneous recombination of atomic bromine and fluorine, (with G.P. Kota and J.W. Coburn), J.Vac. Sci. Tech. A, 17(1), 282-290, 1999.
  69. Energetic ion bombardment of SiO2 surfaces: Molecular dynamics simulations, (with C.F. Abrams), J. Vac. Sci. Tech. A, 16(5), 3006, 1998.
  70. Molecular dynamics simulations of Ar+ and Cl+ impacts onto silicon surfaces: distributions of reflected energies and angles, (with B.A. Helmer), J. Vac. Sci. Tech. A, 16(6), 3502, 1998.
  71. Fluid, Kinetic and Hybrid Simulation Strategies for Modeling Chemically Complex Inductively Coupled Plasmas, (with M. Li, and H. Date), Electron Kinetics and Applications of Glow Discharges, Ed. U. Kortshagen and L. Tsendin, Plenum Press, New York, p. 349-366, 1998.
  72. Role of Oxygen in Ion-Enhanced Etching of Poly-Si and WSix with Chlorine, (with G.P. Kota and J.W. Coburn), J.Vac. Sci. Tech. A, 16(4), 2215 1998.
  73. The recombination of chlorine atoms at surfaces, (with G.P. Kota and J.W. Coburn), J.Vac. Sci. Tech. A, 16(1), 270, 1998.
  74. Molecular dynamics simulations of fluorosilyl species impacting fluorinated silicon surfaces with energies from 0.1 eV to 100 eV, (with B.A. Helmer), J. Vac. Sci. Tech. A, 15(4), 2252, 1997.
  75. Two-dimensional fluid model of an inductively coupled plasma with comparison to experimental spatial profiles, (with J.D. Bukowski and P. Vitello), J. Applied Phys., 80, 2614, 1996.
  76. In Situ Characterization of the Transient Behavior of Particles in Low Pressure Plasmas, (with U.I. Schmidt), J. Vac. Sci. Tech. A, 14, 595, 1996.
  77. Molecular Dynamics Simulations of Direct Reactive Ion Etching: Surface Roughening of Silicon by Chlorine, (with M.E. Barone and T.O. Robinson), IEEE Transactions on Plasma Science, 24, 77, 1996.
  78. Molecular Dynamics Simulations of Plasma-Surface Chemistry, (with M.E. Barone), Plasma Sources Science and Technology, 5, 1, 1996.
  79. Molecular Dynamics Simulations of Direct Reactive Ion Etching of Silicon by Fluorine and Chlorine, (with M.E. Barone), J. Appl. Phys., 78, 6604, 1995.
  80. Matching an RF Sheath Model to a Bulk Plasma Model, (with T.E. Nitschke), IEEE Trans. Plasma Sci., 23, 717, 1995.
  81. Derivation and experimental verification of a particulate transport model for a glow discharge, (with J.E. Daugherty), J. Appl. Physics, 78, 2279, 1995.
  82. Role of Etch Products in Polysilicon Etching in a High Density Chlorine Discharge, (with C. Lee, and M.A. Lieberman), Plasma Chemistry Plasma Processing, 16, 99, 1996.
  83. Chemical and Physical Sputtering of Fluorinated Silicon, (with M.E. Barone), J. Appl. Phys., 77, (3), 1263, Feb, 1995.
  84. Global Model of Plasma Chemistry in a High Density Oxygen Discharge (with C. Lee, D.W. Hess, and M.A. Lieberman), J. Electrochemical Society, 141, 1546, 1994.
  85. A Comparison of Particle in Cell and Fluid Model Simulations of Low-Pressure Radio Frequency Discharges, (with T.E. Nitschke), J. Appl. Phys., 76, (10), 5646, Nov, 1994.
  86. Plasma Uniformity in High-density Inductively Coupled Plasma Tools, (with R.A. Stewart, P. Vitello, E.F. Jaeger, and L.A. Berry), Plasma Sources Sci. Technol. 4, 36, Aug, 1994.
  87. Comparison Between a Two-Dimensional Simulation and a Global Conservation Model for a Compact ECR Plasma Source, (with H-M. Wu, and R.K. Porteous), Plasma Sources Sci. Technol. 4, 22, Oct, 1994.
  88. Charging, Transport and Heating of Particles in Radiofrequency and Electron Cyclotron Resonance Plasmas, (with J.E. Daugherty, M.D. Kilgore, and R.K. Porteous), Plasma Sources Sci. Technol. 3, 433, Jan, 1994.
  89. Plasma Processing, (Invited Review), IEEE Trans. Plasma Sci., 22, 31, 1994.
  90. The Gaseous Electronics Conference Radio-Frequency Reference Cell: A defined parallel plate radio-frequency system for experimental and theoretical studies of plasma-processing discharges, (with 32 others), Rev. Sci. Instrum., 65, 140, 1994.
  91. A Two-Dimensional Fluid Model of High Density Inductively Coupled Plasma Sources, (with R.A. Stewart and P. Vitello) J. Vac. Sci. and Tech. B, 12, 478, 1994.
  92. Neutral Transport in High Plasma-Density Reactors, (with M.D. Kilgore, and H.M. Wu), J. Vac. Sci. and Tech. B, 12, 494, 1994.
  93. Transport and Heating of Small Particles in High Density Plasma Sources, (with M.D. Kilgore, J.E. Daugherty, and R.K. Porteous), J. Vac. Sci. and Tech. B, 12, 486, 1994.
  94. A Two-Dimensional Axisymmetric Model of a Magnetized Glow Discharge Plasma (with R.K. Porteous and H.-M. Wu), Plasma Sources Science and Technology, 3, 25, 1994.
  95. Particulate Temperature in rf Glow Discharges, (with J.E. Daugherty), J. Vac. Sci. Tech. A, 11. 1126, 1993.
  96. Modeling and Simulation of High Density Plasmas, (with H.-M. Wu and R.K. Porteous), Japanese Journal of Applied Physics, 32, 2999, 1993.
  97. Ion Drag on an Isolated Particulate in a Low Pressure Discharge (with M.D. Kilgore, J.E. Daugherty and R.K. Porteous), J. Appl. Phys., 73, 7195, 1993.
  98. Electrostatic Forces on Small Particles in Low Pressure Discharges (with J.E. Daugherty and R.K. Porteous), J. Appl. Phys., 73. 1617, 1993.
  99. A Model of Particulates in Glow Discharge Plasmas (with M.D. Kilgore, J.E. Daugherty and R.K. Porteous), Proc. Electrochemical Society, 92-18, 221, 1992.
  100. Spin Coating over Topography (with L.M. Peurrung), IEEE Trans. Semicond. Manufac., 6, 72, 1993.
  101. Sheath Structure Around Particles in Low Pressure Discharges (with J.E. Daugherty, M.D. Kilgore, and R.K. Porteous), J. Appl. Phys., 72, 3934, 1992.
  102. Self-Consistent DC Glow Discharge Simulations Applied to Diamond Film Deposition Reactors (with M. Surendra and L.S. Plano), J. Appl. Phys., 71, 5189, 1992.
  103. Capacitively Coupled Glow Discharges at Frequencies above 13.56 MHz (with M. Surendra), Applied Physics Letters, 59, 2091, 1991.
  104. Film Thickness Profiles over Topography in Spin Coating (with L.M. Manske), J. Electrochem Soc., 138, 2115, 1991.
  105. Particle Thermophoresis in Low Pressure Glow Discharges (with G.M. Jellum and J.E. Daugherty), J. Appl. Phys., 69, 6923, 1991.
  106. Modeling and Simulation of Magnetically Confined, Low Pressure Plasmas in Two Dimensions (with R.K. Porteous), IEEE Trans. Plasma Sci., 19, 204, 1991).
  107. Particle Simulations of Radiofrequency Glow Discharges (with M. Surendra), IEEE Trans. Plasma Sci., 19, 144, 1991.
  108. Electron Acoustic Waves in Capacitatively Coupled, Low-pressure RF Glow Discharges (with M. Surendra), Phys. Rev. Lett., 66, 1469, 1991.
  109. Particle-plasma Interactions in Low Pressure Discharges (with G.M. Jellum), Applied Physics Letters, 57, 2077, 1990.
  110. Computer Applications in Plasma materials Processing (with R.A. Gottscho), Computers in Physics, 584, November/December, 1990.
  111. Dynamic Measurements of Film Thickness over Local Topography in Spin Coating (with L.M. Manske and W.B. Oldham), Applied Physics Letters, 56, 2348, 1990.
  112. Particulates in Aluminum Sputtering Discharges (with G.M. Jellum), J. Appl. Phys., 67, 6490, 1990.
  113. Electron Heating in Low Pressure glow Discharges (with M. Surendra and I.J. Morey), Applied Physics Letters, 56, 1022, 1990.
  114. Non-equilibrium Effects in DC and RF Glow Discharges (with M. Surendra), Chapter in Non-Equilibrium Effects in Ion and Electron Transport, edited by E.E. Kunhardt, R. Van Brunt, J. Gallagher and D. Hudson, 157, Plenum, New York, 1990.
  115. Self-consistent model of a Direct-current Glow Discharge: Treatment of Fast Electrons (with M. Surendra and G.M. Jellum), Phys. Rev. A., 41, 1112, 1990.
  116. Photoelectron-initiated Avalanches in Low Pressure Glow Discharges (with A. Mitchell, G.R. Scheller and R.A. Gottscho), Phys. Rev. A., 40, 5199, 1989.
  117. Plasma-enhanced Etching and Deposition (with D.W. Hess), Chapter 8 in Microelectronics Processing, Advances in Chemistry 221, American Chemical Society, Washington, DC, 1989.
  118. Plasma Processing in Electronic Materials Processing, AIChE J. (Journal Review), 35, 1-29, 1989.
  119. Local Field and Ballistic Electron Models for Low Pressure RF and DC Glow Discharges (with R.A. Gottscho, A. Mitchell, G.R. Scheller, N.L. Schryer and J.-P Boeuf), Proc. Seventh Symposium on Plasma Processing, 88-22), 1, Eds. G.S. Mathad, G.C. Schwartz and D.W. Hess, Electrochemical Society, Pennington, NJ, 1988.
  120. Nonlinear Excitation and Dissociation Kinetics in Discharges through Mixtures of Rare and Attaching Gases (with R.A. Gottscho, G.R. Scheller and T. Intrator), J. Appl. Phys., 64(9) 4384-4397, 1988.
  121. Quenching Rates of Ar Metastables in Radio-frequency Glow Discharges (with G.R. Scheller, R.A. Gottscho and T. Intrator), J. Appl. Phys., 64(2), 598-606, 1988.
  122. Space-time Resolved Kinetics of Mixed Rare-gas-attaching Gas Plasmas (with R.A. Gottscho, G.R. Scheller and T. Intrator), J. Vac. Sci. Tech. A, 6(3), 1393-1396, 1988.
  123. Fluid Model Simulations of a 13.56 MHz RF Discharge: Time and Space Dependence of Rates of Electron Impact Excitation, J. Appl. Phys., 62(1), 88-94, 1987.
  124. Modeling of Plasma Processing, Proc. 6th Symposium on Plasma Processing, vol. 87-6, Electrochem. Soc., G.S. Mathad, G.C. Schwartz and R.A. Gottscho, Eds., 267-288, 1987.
  125. Theoretical and Computational Problems in Modeling glow Discharges (with K.F. Jensen), Materials Research Soc. Symposia Proc., vol. 68, J.W. Coburn, R.A. Gottscho and D.W. Hess, Eds., 29-230, 1986.
  126. A Continuum Model of DC and RF Discharges (with K.F. Jensen), IEEE Trans. Plasma. Sci., PS-14 (2), 78-91, 1986.
  127. Modeling of Reactors for Plasma Processing I. Silicon Etching by CF4 in a Radial Flow Reactor (with M. Dalvie and K.F. Jensen), Chem. Eng. Sci., 41(4), 653-660.
  128. CVD in Stagnation Point Flow (with C. Houtman and K.F. Jensen), J. Electrochem Soc. 133(5), 1986, 961-970.
  129. Modeling and Analysis of Low Pressure CVD Reactors (with K.F. Jensen), J. Electrochem. Soc. 130(9), 1950-1957, 1983.
  130. Flammability Characteristics and Structure of Pulverized Coal, Laminar Opposed Jet Diffusion Flame (with J.O.L. Wendt), 19th Symposium (international) on Combustion, The Combustion Institute, 1189-1196, 1982.